Effect of Lateral Body Terminal on Silicon–Oxide–Nitride–Oxide–Silicon Thin-Film Transistors

Author

Hung-Wei Li ; Ting-Chang Chang ; Geng-Wei Chang ; Chia-Sheng Lin ; Tsung-Ming Tsai ; Fu-Yen Jian ; Ya-Hsiang Tai ; Ming-Hsien Lee

Author_Institution

Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

32

Issue

10

fYear

2011

Firstpage

1394

Lastpage

1396

Abstract

We investigate lateral-body-terminal silicon-oxide-nitride-oxide-silicon thin-film transistors (LBT SONOS TFTs) under erasing operation. These devices have superior erasing efficiency by gate as well as lateral body electrode exerting bias. The erasing mechanism of LBT SONOS TFTs has been illustrated by the energy band diagrams. Holes gain sufficient energy by the electric field in the deep-depletion region to surmount the tunneling oxide barrier because of exerting body bias under erasing operation. In addition, the lateral body terminal exerting bias can enhance the erasing efficiency and is confirmed by different erasing conditions and structures. In addition, to verify the hole current injecting from the lateral body site, the size effect of LBT SONOS TFTs is also discussed.

Keywords

elemental semiconductors; nitrogen compounds; silicon compounds; thin film transistors; SONOS thin-film transistors; body bias; deep-depletion region; electric field; energy band diagrams; erasing operation; erasing structures; hole current; lateral body terminal thin-film transistors; size effect; tunneling oxide barrier; Logic gates; SONOS devices; Silicon; Thin film transistors; Tunneling; Erasing efficiency; hole injection; silicon–oxide–nitride–oxide–silicon (SONOS); thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2162481

Filename

5991907