• DocumentCode
    1302834
  • Title

    A Novel Low Area Overhead Direct Adaptive Body Bias (D-ABB) Circuit for Die-to-Die and Within-Die Variations Compensation

  • Author

    Mostafa, Hassan ; Anis, Mohab ; Elmasry, Mohamed

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
  • Volume
    19
  • Issue
    10
  • fYear
    2011
  • Firstpage
    1848
  • Lastpage
    1860
  • Abstract
    A direct adaptive body bias (D-ABB) circuit is proposed in this paper. The D-ABB is used to compensate for die-to-die (D2D) and within-die (WID) parameter variations, and accordingly, improves the circuit yield regarding the speed, the dynamic power, and the leakage power. The D-ABB circuit consists of threshold voltage estimation circuits and direct control of the body bias performed by on-chip direct controller circuits. Circuit level simulation results of a circuit block case study, extracted from a real microprocessor critical path, referring to an industrial hardware-calibrated 65-nm CMOS technology transistor model, are presented. These results show that the proposed D-ABB reduces the standard deviations of the frequency, the dynamic power, and the leakage power by factors of 5.5×, 6.4×, and 4.5×, respectively, when both D2D and WID variations are considered. In addition, in the presented case study, initial total yields of 16.8% and 13% are improved to 100% and 91.4%, respectively. The proposed D-ABB circuit exhibits lower area overhead compared to the other ABB circuits reported in the literature.
  • Keywords
    CMOS integrated circuits; circuit simulation; compensation; integrated circuit design; integrated circuit modelling; integrated circuit yield; leakage currents; microprocessor chips; CMOS technology transistor model; D-ABB circuit; D2D variations; WID variations; circuit block; circuit level simulation; circuit yield; die-to-die compensation; die-to-die parameter variations; dynamic power; industrial hardware; leakage power; low area overhead direct adaptive body bias circuit; microprocessor critical path; on-chip direct controller circuits; size 65 nm; standard deviations; threshold voltage estimation circuits; within-die variations compensation; CMOS integrated circuits; CMOS technology; MOSFETs; Sensors; Threshold voltage; Adaptive body bias (ABB); die-to-die (D2D); microprocessors; process variations compensation; within-die (WID); yield improvement;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2010.2060503
  • Filename
    5556061