• DocumentCode
    1302925
  • Title

    Electron velocity enhancement by planar-doped barrier source in GaAs vertical FET

  • Author

    Yamasaki, Kazuhiko ; Daniels-Race, T. ; Wendt, J.R. ; Schaff, W.J. ; Tasker, P.J. ; Eastman, L.F.

  • Author_Institution
    Cornell Univ., Ithaca, NY
  • Volume
    24
  • Issue
    22
  • fYear
    1988
  • fDate
    10/27/1988 12:00:00 AM
  • Firstpage
    1383
  • Lastpage
    1384
  • Abstract
    Experimental evidence of electron velocity enhancement by hot-electron injection into the channel of a GaAs vertical FET has been obtained for the first time. The maximum transconductance and the average electron velocity are 234 mS/mm and 6.4×107 cm/s respectively, which are 1.4 and 1.9 times as large as those of a conventional vertical FET
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; hot carriers; 234 mS; GaAs; III-V semiconductors; VFET; electron velocity enhancement; hot-electron injection; planar-doped barrier source; transconductance; vertical FET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    82454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1302925