• DocumentCode
    1303470
  • Title

    High-Performance \\hbox {Ni}/\\hbox {Lu}_{2}\\hbox {O}_{3}/ \\hbox {TaN} Metal–Insulator–Metal Capacitors

  • Author

    Mondal, Somnath ; Pan, Tung-Ming

  • Author_Institution
    Dept. of Electron. Eng., Chang Gung Univ., Gueishan, Taiwan
  • Volume
    32
  • Issue
    11
  • fYear
    2011
  • Firstpage
    1576
  • Lastpage
    1578
  • Abstract
    We fabricate the Ni/Lu2O3/TaN metal-insulator-metal capacitor with a high capacitance density of 7.5 fF/μm2, a relatively small quadratic voltage coefficient of capacitance (VCC) of 75 ppm/V2, a low leakage current of 5 × 10-8 A/cm2 at -1 V, and an excellent ten-year reliability with a very low ΔC/C of 0.51% at 3 V. These small VCC value and good reliability are attributed to a reduction of carrier injection and trapping into the dielectric.
  • Keywords
    MIM devices; capacitors; leakage currents; lutetium compounds; nickel alloys; nitrogen; reliability; tantalum alloys; MIM capacitor; Ni-Lu2O3-TaN; capacitance density; carrier injection reduction; carrier trapping reduction; leakage current; metal-insulator-metal capacitor; quadratic VCC; quadratic voltage coefficient of capacitance; reliability; voltage 1 V; voltage 3 V; Capacitance; Capacitors; MIM capacitors; Nickel; Reliability; Stress; $hbox{Lu}_{2}hbox{O}_{3}$; Ni; TaN; metal–insulator–metal (MIM); reliability;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2163611
  • Filename
    5993495
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1303470