• DocumentCode
    1303475
  • Title

    Widely Tunable High-Power Tapered Diode Laser at 1060 nm

  • Author

    Jensen, Ole Bjarlin ; Sumpf, Bernd ; Erbert, Götz ; Petersen, Paul Michael

  • Author_Institution
    Dept. of Photonics Eng., Tech. Univ. of Denmark, Roskilde, Denmark
  • Volume
    23
  • Issue
    21
  • fYear
    2011
  • Firstpage
    1624
  • Lastpage
    1626
  • Abstract
    We report a large tuning range from 1018 to 1093 nm from a InGaAs single quantum-well 1060-nm external cavity tapered diode laser. More than 2.5-W output power has been achieved. The tuning range is to our knowledge the widest obtained from a high-power InGaAs single quantum-well tapered laser operating around 1060 nm. The light emitted by the laser has a nearly diffraction limited beam quality and a narrow linewidth of less than 6 pm everywhere in the tuning range.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser tuning; quantum well lasers; InGaAs; narrow linewidth; near diffraction limited beam quality; single quantum well external cavity tapered diode laser; wavelength 1018 nm to 1093 nm; widely tunable high power tapered diode laser; Cavity resonators; Diode lasers; Laser beams; Measurement by laser beam; Power generation; Semiconductor lasers; Tuning; Laser tuning; quantum-well lasers; semiconductor lasers; tapered lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2011.2165702
  • Filename
    5993496