• DocumentCode
    1303674
  • Title

    SOI TFET I_{\\rm ON}/I_{\\rm OFF} Enhancement via Back Biasing

  • Author

    Guo, Anjin ; Matheu, P. ; Tsu-Jae King Liu

  • Author_Institution
    Univ. of California, Berkeley, CA, USA
  • Volume
    58
  • Issue
    10
  • fYear
    2011
  • Firstpage
    3283
  • Lastpage
    3285
  • Abstract
    The effect of back biasing on the performance of a planar tunnel field-effect transistor (TFET) implemented on a silicon-on-insulator substrate is investigated. It is found that reverse back biasing reduces the subthreshold swing SS and increases the range of drain current over which SS is less than (kBT/q)ln(10); hence, it is effective for improving the TFET on/off current ratio for low operating voltages (≤ 0.5 V).
  • Keywords
    field effect transistors; silicon-on-insulator; SOI TFET; back biasing; planar tunnel field effect transistor; silicon-on-insulator substrate; subthreshold swing; Doping; Junctions; Logic gates; Photonic band gap; Silicon; Transistors; Tunneling; Back biasing; tunnel field-effect transistor (TFET); ultra low power;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2161480
  • Filename
    5993526
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1303674