DocumentCode
1305274
Title
Ultra-low reflectivity broadband 1.5 mu m GaInAsP semiconductor optical amplifiers
Author
Barnsley, P.E. ; Isaac, J.J. ; Elton, D.J.
Author_Institution
British Telecom Res. Labs., Ipswich, UK
Volume
26
Issue
12
fYear
1990
fDate
6/7/1990 12:00:00 AM
Firstpage
825
Lastpage
827
Abstract
Laser amplifiers with facet reflectivities of 3*10-5 over a bandwidth of 70 nm have been produced by combining a multilayer AR coating with angled device facets. The facet reflectivities were found to be highly reproducible. The amplifiers have a saturated output power in excess of +or-5 dBm.
Keywords
III-V semiconductors; amplifiers; antireflection coatings; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; optical communication equipment; semiconductor junction lasers; 1.5 micron; GaInAsP; angled device facets; broadband; facet reflectivities; multilayer AR coating; semiconductor lasers; semiconductor optical amplifiers; ultralow reflectivity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900539
Filename
52106
Link To Document