DocumentCode
130539
Title
A 0.03mm2 highly balanced balun IC for millimeter-wave applications in 180-nm CMOS
Author
Zheng Sun ; Xiao Xu ; Xin Yang ; Shibata, Takuma ; Yoshimasu, Toshihiko
Author_Institution
Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan
fYear
2014
fDate
27-30 Aug. 2014
Firstpage
1
Lastpage
3
Abstract
A miniaturized broadband balun IC in 180-nm CMOS is presented for millimeter-wave applications. The balun IC is designed so that high impedance ratio between the even and odd modes is achieved by utilizing Electro-magnetic solver suitable for planer structure. The fabricated balun IC in 180-nm CMOS process occupies only 0.03 mm2. The balun IC exhibits an amplitude imbalance of less than 0.9 dB and a phase imbalance of less than 2.5 degrees in a frequency range from 20 GHz to 66 GHz.
Keywords
CMOS integrated circuits; baluns; millimetre wave integrated circuits; CMOS process; amplitude imbalance; electromagnetic solver; even mode; frequency 20 GHz to 66 GHz; high impedance ratio; highly balanced balun IC; millimeter-wave applications; miniaturized broadband balun IC; odd mode; phase imbalance; planer structure; size 180 nm; CMOS integrated circuits; Impedance matching; Loss measurement; Power transmission lines; Radio frequency; Transmission line measurements; 180-nm CMOS; Marchand balun; Millimeter-wave applications;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio-Frequency Integration Technology (RFIT), 2014 IEEE International Symposium on
Conference_Location
Hefei
Type
conf
DOI
10.1109/RFIT.2014.6933244
Filename
6933244
Link To Document