Intensity noise dependence on the injection current of laser diodes with optical feedback

Author

Port, Michael ; Ebeling, Karl J.

Author_Institution

Inst. fuer Hochfrequenztech., Tech. Univ. Braunschweig, West Germany

Volume

26

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

449

Lastpage

455

Abstract

With increased injection current both low- and high-frequency intensity fluctuations shift toward higher frequencies. A comparison between the experimental results for an InGaAsP laser diode and a small-signal analysis of the laser rate equations shows that both types of frequency fluctuations can be interpreted as complex relaxation oscillations of a laser diode with external feedback. The simple model describes reasonably well the frequency shift and the spectral width of the fluctuations observed

Keywords

III-V semiconductors; electron device noise; feedback; fluctuations; gallium arsenide; gallium compounds; indium compounds; semiconductor device models; semiconductor junction lasers; spectral line breadth; spectral line shift; InGaAsP; complex relaxation oscillations; external feedback; frequency shift; high-frequency intensity fluctuations; injection current; laser diode intensity noise; laser diodes; laser rate equations; low-frequency intensity fluctuations; optical feedback; small-signal analysis; spectral width; Diode lasers; Fluctuations; Frequency; Laser feedback; Laser modes; Laser noise; Optical feedback; Optical noise; Semiconductor device noise; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.52120

Filename

52120