Microfabricated small metal cantilevers with silicon tip for atomic force microscopy

Author

Chand, Ami ; Viani, Mario B. ; Schaffer, Tilman E. ; Hansma, Paul K.

Author_Institution

Veeco Metrol. Group, Digital Instrum. Inc., Santa Barbara, CA, USA

Volume

9

Issue

1

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

112

Lastpage

116

Abstract

Atomic force microscopy with small cantilevers is faster due to higher resonant frequencies and has a lower noise level. We report a new process to microfabricate small metal cantilevers with integrated silicon tips. This process is used to fabricate gold cantilevers that are 13-40-/spl mu/m long, 5-10-/spl mu/m wide, and 100-160-nm thick. The tip is first formed at the free end of a sacrificial oxide cantilever. The cantilever layer of the desired metal is then deposited on the nontip side of the sacrificial oxide cantilever. The oxide layer is removed to form the cantilevers with tips on them in a batch process. The highly stressed cantilevers are rapid thermal annealed for 60 s at 300/spl deg/C to relieve the stress. The gold cantilevers have been characterized through their thermal spectra and used to image in tapping mode. The process can be used, not only for gold, but also for any metal or compound that can withstand removal of sacrificial oxide cantilevers.

Keywords

atomic force microscopy; elemental semiconductors; gold; micromachining; rapid thermal annealing; silicon; stress relaxation; 100 to 160 nm; 13 to 40 mum; 300 C; 5 to 10 mum; 60 s; Au; Si; atomic force microscopy; batch process; gold cantilevers; integrated silicon tips; microfabricated small metal cantilevers; microfabrication; noise level; rapid thermal annealing; resonant frequencies; sacrificial oxide cantilever; silicon tip; tapping mode; thermal spectra; Atomic force microscopy; Fabrication; Gold; Rapid thermal processing; Resonant frequency; Silicon; Springs; Surface topography; Temperature sensors; Thermal stresses;

fLanguage

English

Journal_Title

Microelectromechanical Systems, Journal of

Publisher

ieee

ISSN

1057-7157

Type

jour

DOI

10.1109/84.825785

Filename

825785