Three-dimensional base distributed effects of long stripe BJT´s: base resistance at DC

Author

Chuang, Ming-Yeh ; Law, Mark E. ; O, Kenneth

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

Volume

45

Issue

2

fYear

1998

fDate

2/1/1998 12:00:00 AM

Firstpage

439

Lastpage

446

Abstract

An analytical model describing the DC voltage and current distributed effects in the polysilicon and intrinsic base regions of long stripe BJTs with double polysilicon technology is presented. It is shown that the bias dependent debiasing effect in the base polysilicon contacts causes an unequal division of base current between two base polysilicon contacts and results in a redistribution of base current in the base regions at different levels of current injection. The base resistance is also modulated by this current re-distribution effect at different biases. The change of base resistance with bias is calculated and the results show the importance of the distributed effects in the base polysilicon region in determining the base resistance

Keywords

bipolar transistors; current distribution; electric resistance; semiconductor device models; silicon; 3D base distributed effects; DC current distributed effects; DC voltage distributed effects; Si; analytical model; base polysilicon contacts; base resistance; bias dependent debiasing effect; current injection; current redistribution effect; double polysilicon technology; intrinsic base region; long stripe BJT; polysilicon region; three-dimensional distributed effects; Analytical models; Bipolar transistors; Computational modeling; Conductivity; Current distribution; Distributed computing; Proximity effect; Solid modeling; Two dimensional displays; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658678

Filename

658678