• DocumentCode
    1306529
  • Title

    Polycrystalline Silicon Thin-Film Transistor Using Xe Flash-Lamp Annealing

  • Author

    Saxena, Saurabh ; Kim, Dong Cheol ; Park, Jeang Hun ; Jang, Jin

  • Author_Institution
    Adv. Display Res. Center, Kyung Hee Univ., Seoul, South Korea
  • Volume
    31
  • Issue
    11
  • fYear
    2010
  • Firstpage
    1242
  • Lastpage
    1244
  • Abstract
    We report a high-performance thin-film transistor (TFT) using polycrystalline silicon (poly-Si) by short-pulse Flash-lamp annealing of amorphous silicon. Large grains of average size of ~15 μm with wide branchlike grain boundaries were found in the poly-Si, and there was no amorphous phase inside. The fabricated p-channel poly-Si TFT on the grain exhibited field-effect mobility of 138 cm2/V · sec, a threshold voltage of -1.3 V, and an on/off current ratio of 108.
  • Keywords
    annealing; carrier mobility; elemental semiconductors; silicon; thin film transistors; Si; field effect mobility; polycrystalline silicon thin film transistor; short pulse flash lamp annealing; Annealing; Crystallization; Glass; Grain boundaries; Silicon; Thin film transistors; Threshold voltage; Crystallization; Flash-lamp annealing (FLA); excimer-laser annealing (ELA); low-temperature polycrystalline silicon (poly-Si) (LTPS); thin-film transistors (TFTs);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2064282
  • Filename
    5559325
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1306529