DocumentCode
1306533
Title
High-current pulse-doped GaInAs MESFET
Author
Fathimulla, A. ; Hier, H. ; Abrahams, J.
Author_Institution
Bendix Aerosp. Technol. Centre, Allied-Signal Aerosp. Co., Columbia, MD, USA
Volume
24
Issue
8
fYear
1988
fDate
4/14/1988 12:00:00 AM
Firstpage
498
Lastpage
499
Abstract
The authors report the DC and microwave performance of pulse-doped GaInAs power MESFETs. For a 0.7 μm gate-length device, a maximum drain-current density of 870 mA/mm and a peak transconductance of 325 mS/mm were measured. A maximum stable gain of 11.7 dB at 26 GHz, and an extrapolated f t of 33 GHz were obtained. These values are the highest reported for MESFETs having gates as long as 0.7 μm
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; solid-state microwave devices; 0.7 micron; 11.7 dB; 26 to 33 GHz; 325 mS; DC performance; GaInAs; III-V semiconductors; MESFET; microwave performance; peak transconductance; pulsed doped power transistor; solid-state microwave device; submicron gate length;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
8259
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