Tunnel Field Effect Transistor With Raised Germanium Source

Author

Kim, Sung Hwan ; Agarwal, Sapan ; Jacobson, Zachery A. ; Matheu, Peter ; Hu, Chenming ; Liu, Tsu-Jae King

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA

Volume

31

Issue

10

fYear

2010

Firstpage

1107

Lastpage

1109

Abstract

The performance of a tunnel field effect transistor (TFET) with a raised germanium (Ge) source region is investigated via 2-D device simulation with a tunneling model calibrated to experimental data. The comparison of various Ge-source TFET designs shows that a fully elevated Ge-source design provides for the steepest subthreshold swing and, therefore, the largest on-state drive current for low-voltage operation. Mixed-mode (dc and ac) simulations are used to assess the energy-delay performance. In comparison with a MOSFET, an optimized Ge-source TFET is projected to provide for a lower energy per operation for throughput in the frequency range of up to ~1 GHz for sub-0.5-V operation.

Keywords

field effect transistors; germanium; 2D device simulation; Ge; ON-state drive current; energy-delay performance; low-voltage operation; mixed-mode simulations; subthreshold swing; tunnel field effect transistor; voltage 0.5 V; Capacitance; Data models; Logic gates; MOSFET circuits; Silicon; Transistors; Tunneling; Band-to-band tunneling (BTBT); germanium (Ge) source; raised source; tunnel field effect transistor (TFET);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2061214

Filename

5559328