DocumentCode
1306564
Title
Fast and accurate IGBT model for PSpice
Author
Sheng, Kun ; Finney, Stephen J. ; Williams, Barry W.
Author_Institution
Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh
Volume
32
Issue
25
fYear
1996
fDate
12/5/1996 12:00:00 AM
Firstpage
2294
Lastpage
2295
Abstract
A new PSpice IGBT model is presented which combines existing BJT and MOSFET models and equations to give a more realistic drain-gate capacitance model. Electrical simulation performance gives the accuracy of complex equation based models, but involves the computational time of simple inaccurate model based approaches. Simulation and experimental results vindicate the new model
Keywords
SPICE; insulated gate bipolar transistors; semiconductor device models; BJT; IGBT; MOSFET; PSpice model; drain-gate capacitance; electrical simulation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961548
Filename
555933
Link To Document