More on SOI

This is the second of two issues on the subject of silicon-on-insulator (SOI) devices. Our collection of articles includes a third material technique (oxidation of porous silicon), design considerations for SOI, and some potential and existing applications. A total of 12 articles from four countries make up these two issues, and we received some 23 responses advertising activity in the SOI area. I would like to express my appreciation to each of these authors for their contributions, which have provided us with an excellent perspective on SOI materials and devices.