• DocumentCode
    1306875
  • Title

    Electron detrapping enhanced by electric field in AlGaAs/GaAs HEMTs

  • Author

    Canali, Carlo ; Tedesco, C. ; Zanoni, Enrico ; Magistrali, F. ; Sangalli, M.

  • Author_Institution
    Dipartimento di Elettronica ed Inf., Padova Univ., Italy
  • Volume
    26
  • Issue
    5
  • fYear
    1990
  • fDate
    3/1/1990 12:00:00 AM
  • Firstpage
    313
  • Lastpage
    315
  • Abstract
    A remarkable enhancement by electric field of the detrapping time of electrons from deep donor levels, probably associated with DX centres in the AlGaAs layer, has been directly observed at room temperature in an AlGaAs/GaAs HEMT, whose performance results show to be a function of bias conditions. In particular, detrapping time decreases by one order of magnitude on increasing VDS from 0.5 V to 5 V, moving device response from the linear to the strongly saturated region.
  • Keywords
    III-V semiconductors; aluminium compounds; deep levels; electric field effects; electron traps; gallium arsenide; high electron mobility transistors; 0.5 to 5 V; AlGaAs-GaAs high electron mobility transistor; DX centres; HEMT; III-V semiconductors; bias conditions; deep donor levels; detrapping time; device response; electric field; electron detrapping enhancement; linear region; performance results; room temperature; saturated region;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900206
  • Filename
    82632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1306875