Reliable wide-temperature-range operation of 1.3-μm beam-expander integrated laser diode for passively aligned optical modules

Author

Aoki, Masahiro ; Komori, Masaaki ; Sato, Hiroshi ; Tsuchiya, Tomonobu ; Taike, Akira ; Takahashi, Makoto ; Uomi, Kazuhisa ; Tsuji, Shinji

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

3

Issue

6

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

1405

Lastpage

1412

Abstract

A novel structure for a 1.3-μm beam-expander integrated (BEX) laser diode is demonstrated. It combines a thickness-tapered InGaAsP-InP multiple quantum-well (QW) crystal grown by a novel silicon shadow masked metalorganic vapor phase epitaxy and a simple reverse-trapezoid-ridge waveguide laser structure that offers smooth mode field expansion and improved high-temperature lasing performance. We found this new BEX laser quite suitable for operation over a wide range of temperatures above 85°C and highly efficient lens-free coupling to a single-mode fiber (SMF) of less than 3 dB. These excellent lasing properties along with reliability under severe environmental conditions make this BEX-LD a promising candidate for practical use for low-cost long-wavelength light-source modules using optical passive alignment techniques

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser beams; laser reliability; laser transitions; modules; optical transmitters; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 mum; 85 C; InGaAsP-InP; beam-expander integrated laser diode; high-temperature lasing performance; highly efficient lens-free coupling; lasing properties; low-cost long-wavelength light-source modules; optical passive alignment techniques; passively aligned optical modules; reliable wide-temperature-range operation; reverse-trapezoid-ridge waveguide laser; severe environmental conditions; silicon shadow masked metalorganic vapor phase epitaxy; single-mode fiber; smooth mode field expansion; thickness-tapered InGaAsP-InP multiple quantum-well; Diode lasers; Epitaxial growth; Fiber lasers; Laser modes; Optical coupling; Optical waveguides; Quantum well lasers; Silicon; Temperature distribution; Waveguide lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.658795

Filename

658795