Elevated temperature performance of pseudomorphic AlGaAs/InGaAs MODFETs

Author

Zurek, Steven J. ; Darling, Robert B. ; Kuhn, Kelin J. ; Foisy, Mark C.

Author_Institution

Dallas Semicond. Inc., TX, USA

Volume

45

Issue

1

fYear

1998

fDate

1/1/1998 12:00:00 AM

Firstpage

2

Lastpage

8

Abstract

Parametric DC measurements on pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistors (MODFETs) were carried out over the 300-405 K temperature range. A gradual channel device model was developed to simulate the temperature dependent behavior and assist in the interpretation of the characteristics. The simulations are shown to provide good predictive ability and confirm the physical reasons why the zero temperature coefficient point of a MODFET occurs only for gate bias voltages below the threshold voltage

Keywords

III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; 300 to 405 K; AlGaAs-InGaAs; HEMT; electron mobility model; elevated temperature performance; field-effect transistors; gate bias voltages; gradual channel device model; modulation-doped FET; parametric DC measurements; pseudomorphic MODFET; temperature dependent behavior simulation; threshold voltage; zero temperature coefficient point; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; MESFETs; MODFETs; Predictive models; Temperature dependence; Temperature distribution; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658804

Filename

658804