DocumentCode
1307380
Title
An improved MOSFET model for circuit simulation
Author
Joardar, Kuntal ; Gullapalli, Kiran Kumar ; McAndrew, Colin C. ; Burnham, Marie Elizabeth ; Wild, Andreas
Author_Institution
Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA
Volume
45
Issue
1
fYear
1998
fDate
1/1/1998 12:00:00 AM
Firstpage
134
Lastpage
148
Abstract
Problems that have continued to remain in some of the recently published MOSFET compact models are demonstrated in this paper. Of particular interest are discontinuities observed in these models at the boundary between forward and reverse mode operation. A new MOSFET model is presented that overcomes the errors present in state-of-the-art models. Comparison with measured data is also presented to validate the new model
Keywords
MOSFET; circuit analysis computing; semiconductor device models; MOSFET model; circuit simulation; discontinuities; forward mode; reverse mode; Analog circuits; Capacitance-voltage characteristics; Circuit simulation; Displays; Geometry; MOSFET circuits; Physics; SPICE; Smoothing methods; Solid modeling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.658823
Filename
658823
Link To Document