Investigation of a multigigahertz MOSFET amplifier with an on-chip inductor fabricated on a SIMOX wafer

Author

Harada, Mitsuru ; Yamaguchi, Chikara ; Tsuchiya, Toshiaki

Author_Institution

NTT System Electron. Labs., Kanagawa, Japan

Volume

45

Issue

1

fYear

1998

fDate

1/1/1998 12:00:00 AM

Firstpage

173

Lastpage

178

Abstract

This paper describes a technology that can be used to integrate multigigahertz RF circuits into large-scale digital circuits. Spiral inductors and a MOSFET amplifier with an inductive load were fabricated on a SIMOX wafer in order to demonstrate the feasibility of SOI technology. With a 1-V supply voltage, peaking of the amplifier gain was observed, as expected from circuit simulations, at 1-4 GHz. These results show that RF circuits with inductors can be implemented on a SIMOX wafer by using the conventional digital CMOS LSI process

Keywords

CMOS digital integrated circuits; MOSFET circuits; SIMOX; UHF amplifiers; inductors; large scale integration; 1 V; 1 to 4 GHz; CMOS LSI process; RF circuit; SIMOX wafer; SOI technology; circuit simulation; fabrication; large-scale digital circuit; multigigahertz MOSFET amplifier; on-chip inductor; spiral inductor; CMOS technology; Circuit simulation; Digital circuits; Inductors; Large scale integration; MOSFET circuits; Radio frequency; Radiofrequency amplifiers; Spirals; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658827

Filename

658827