Modeling electron and hole transport with full-band structure effects by means of the Spherical-Harmonics Expansion of the BTE

Author

Vecchi, Maria Cristina ; Rudan, Massimo

Author_Institution

Dipt. di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy

Volume

45

Issue

1

fYear

1998

fDate

1/1/1998 12:00:00 AM

Firstpage

230

Lastpage

238

Abstract

The Spherical-Harmonics solution of the Boltzmann Transport Equation (BTE) in silicon is generalized to the full-band case for both electrons and holes. The relevant scattering mechanisms, including impact ionization, are modeled consistently. Comparison with experimental data and Monte Carlo (MC) analysis emphasize the importance of a correct description of the band structure and impact ionization especially in the analysis of carrier transport at high energies, and the ability of the Spherical-Harmonics Expansion (SHE) scheme to efficiently incorporate the features of the transport mechanisms to a rather general extent

Keywords

Boltzmann equation; band structure; electrical conductivity; elemental semiconductors; impact ionisation; silicon; Boltzmann transport equation; Si; carrier scattering model; electron transport; full-band structure; hole transport; impact ionization; silicon; spherical harmonics expansion; Acoustic scattering; Boltzmann equation; Charge carrier processes; Electrons; Helium; Impact ionization; Monte Carlo methods; Optical scattering; Phonons; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.658836

Filename

658836