DocumentCode
1307648
Title
Estimation of temperature limit for negative differential resistance using resonant tunnelling
Author
Pol, L. De Saint ; Vanbesien, O. ; Lippens, D.
Author_Institution
Centre Hyperfrequences et Semicond., CNRS, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
Volume
26
Issue
5
fYear
1990
fDate
3/1/1990 12:00:00 AM
Firstpage
342
Lastpage
343
Abstract
The temperature limit of negative differential resistance devices using resonant tunnelling in double-barrier heterostructures is derived as a function of structural parameters. The validity of the estimation is supported by computer simulation and experimental investigations on temperature dependencies of current/voltage characteristics by changing the barrier thickness.
Keywords
negative resistance; semiconductor junctions; tunnelling; barrier thickness; computer simulation; current/voltage characteristics; double-barrier heterostructures; experimental investigations; negative differential resistance devices; resonant tunnelling; semiconductor junctions; structural parameters; temperature dependencies; temperature limit;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900224
Filename
82650
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