• DocumentCode
    1307722
  • Title

    200 MeV proton damage effects on multi-quantum well laser diodes

  • Author

    Zhao, U.F. ; Patwary, A.R. ; Schrimpf, R.D. ; Neifeld, M.A. ; Galloway, K.F.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA
  • Volume
    44
  • Issue
    6
  • fYear
    1997
  • fDate
    12/1/1997 12:00:00 AM
  • Firstpage
    1898
  • Lastpage
    1905
  • Abstract
    200 MeV proton damage effects on multi-quantum well GaAs/GaAlAs laser diodes are studied. The threshold current damage factor can vary from 1.73 to 4.60×10-15 cm2/p for different bias conditions and from 1.52 to 3.58×10-15 cm2 /p for different incident directions. A simple model, based on threshold current damage factor, is presented to quantify the degradation of optical power. Preliminary annealing effects are also presented. The annealing effects are greater for devices shorted during irradiation than for those biased at Ibias=35 mA
  • Keywords
    III-V semiconductors; aluminium compounds; annealing; gallium arsenide; proton effects; quantum well lasers; 200 MeV; GaAs-GaAlAs; annealing; bias; model; multi-quantum well laser diode; optical power degradation; proton damage; threshold current damage factor; Annealing; Degradation; Diode lasers; Low earth orbit satellites; Pins; Power system modeling; Protons; Quantum well devices; Quantum well lasers; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.658959
  • Filename
    658959
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1307722