DocumentCode
1307749
Title
Hydrogen passivation of high purity n-type InP
Author
Lancefield, D. ; Waterhouse, K. ; Adams, A.R. ; Greene, P.D. ; Glew, R.W.
Volume
26
Issue
6
fYear
1990
fDate
3/15/1990 12:00:00 AM
Firstpage
369
Lastpage
371
Abstract
It has been shown for the first time that the concentration of ionised impurities in n-type InP can be reduced by incorporation of atomic hydrogen. The temperature dependence of the electron mobility indicates that donors as well as acceptors are passivated, although the hydrogen is more strongly bound when passivating acceptors.
Keywords
Hall effect; III-V semiconductors; carrier density; carrier mobility; electrical conductivity of crystalline semiconductors and insulators; hydrogen; impurity electron states; indium compounds; passivation; Hall mobility; Hall scattering factor; III-V semiconductors; InP:Fe; InP:Fe, H; acceptor passivation; atomic hydrogen; donor passivation; electron mobility; hydrogen passivation; ionised impurity concentration; n-type InP; temperature dependence;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900241
Filename
82670
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