• DocumentCode
    1308529
  • Title

    Doping level anomalies in p-InP resulting from exposure to dopant precursors during cool-down in MOVPE

  • Author

    Cole, S. ; Duncan, W.J. ; Marsh, E.M. ; Skevington, P.J. ; Spiller, G.D.T.

  • Author_Institution
    British Telecom Res. Labs., Ipswich, UK
  • Volume
    26
  • Issue
    6
  • fYear
    1990
  • fDate
    3/15/1990 12:00:00 AM
  • Firstpage
    391
  • Lastpage
    392
  • Abstract
    Large dopant deactivation effects occur when p-InP is cooled in ambients containing DMZn. This does not appear to be the result of hydrogen passivation, rather the authors believe it to be caused by the presence of high concentrations of interstitial donors.
  • Keywords
    III-V semiconductors; doping profiles; indium compounds; secondary ion mass spectra; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; III-V semiconductors; InP:Zn, H; MOVPE; SIMS; ambients; cool-down; dimethyl zinc; dopant deactivation effects; dopant precursors; epitaxial growth; interstitial donors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900255
  • Filename
    82685
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1308529