A simplified procedure to calculate the power gain definitions of FETs

Author

Paoloni, Claudio

Author_Institution

Dept. of Electron. Eng., Rome Univ., Italy

Volume

48

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

470

Lastpage

474

Abstract

A graphical method to easily derive the power gain definitions of field-effect transistors (FETs) is proposed in this paper. This method is applicable to MESFETs and high electron-mobility transistors described by the typical π model. A new set of simple expressions of the S-parameters, functions of the circuit elements of the FET complete model, is derived. These expressions are presented in graphic form to quickly compute the modules of the FET S-parameters and then the power gains. The accuracy of this approach has been proven by comparison with simulations of the FET complete model

Keywords

S-parameters; Schottky gate field effect transistors; high electron mobility transistors; microwave field effect transistors; semiconductor device models; π model; MESFETs; S-parameters; circuit elements; high electron-mobility transistors; microwave FETs; modules; power gain definitions; Algorithm design and analysis; Capacitance; Circuit analysis computing; Computer networks; Convolution; Equations; FETs; Finite difference methods; Multiconductor transmission lines; Power system transients;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.826850

Filename

826850