Cell-Temperature Determination in InGaP–(In)GaAs–Ge Triple-Junction Solar Cells

Temperature-sensitive voltages are derived from current-voltage characteristics of an InGaP-(In)GaAs-Ge triple-junction solar cell biased at various current densities in the dark and under irradiation. Dynamic measurements of cell temperatures were performed with a solar simulator by alternately permitting and blocking the sunlight. An initial temperature increasing rate of 1°C/s was determined for the solar cell exposed to 1-sun light intensity of 100 mW ·cm^-2. Furthermore, the times required for increases of 5°C, 10°C, and 15°C in the cell temperature were 7, 21, and 48 s, respectively. Experimentally estimated cell temperature was finally stabilized at 48°C ± 0.5°C.