Heavy ion and proton-induced single event multiple upset

Author

Reed, R.A. ; Carts, M.A. ; Marshall, P.W. ; Marshall, C.J. ; Musseau, O. ; McNulty, P.J. ; Roth, D.R. ; Buchner, S. ; Melinger, J. ; Corbière, T.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

44

Issue

6

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2224

Lastpage

2229

Abstract

Individual ionizing heavy ion events are shown to cause two or more adjacent memory cells to change logic states in a high density CMOS SRAM. A majority of the upsets produced by normally incident heavy ions are due to single-particle events that causes a single cell to upset. However, for grazing angles a majority of the upsets produced by heavy-ion irradiation are due to single-particle events that cause two or more cells to change logic states. Experimental evidence of a single proton-induced spallation reaction that causes two adjacent memory cells to change logic states is presented. Results from a dual volume Monte-Carlo simulation code for proton-induced single-event multiple upsets are within a factor of three of experimental data for protons at normal incidence and 70 degrees

Keywords

CMOS memory circuits; Monte Carlo methods; SRAM chips; VLSI; cellular arrays; circuit analysis computing; ion beam effects; nuclear spallation; proton effects; adjacent memory cells; dual volume Monte-Carlo simulation code; grazing angles; heavy ion events; heavy-ion irradiation; high density CMOS SRAM; normal incidence; proton-induced spallation reaction; single event multiple upset; single-particle events; CMOS logic circuits; Equations; Fabrication; Geometry; Hardware; Laboratories; Particle beams; Protons; Random access memory; Semiconductor device manufacture;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.659039

Filename

659039