Recent advances in insulated gate bipolar transistor technology

Author

Yilmaz, Hamza ; Owyang, King ; Chang, Mike F. ; Benjamin, John L. ; Van Dell, W.Ron

Author_Institution

Siliconix Inc., Santa Clara, CA, USA

Volume

26

Issue

5

fYear

1990

Firstpage

831

Lastpage

834

Abstract

Device design of the insulated gate bipolar transistor (IGBT) has been optimized to reduce the distributed transmission-line effect. In addition, cell geometry is chosen to yield high latchup current capability and low forward-voltage drop simultaneously. The vertical structure is optimized to enhance both the turn-off speed and the safe operating area of the IGBTs. The turn-off time of the n-IGBT has been shortened to be as low as 40 ns. The p-channel IGBT latchup current has been improved four to six times over the previously reported results through innovative design and processes. An open-base bipolar transistor model has been implemented to investigate transient IGBT characteristics

Keywords

insulated gate bipolar transistors; optimisation; semiconductor device models; 40 ns; IGBT; cell geometry; design; distributed transmission-line effect; forward-voltage drop; insulated gate bipolar transistor; latchup current; open-base bipolar transistor model; optimisation; p-channel; safe operating area; transient characteristics; turn-off speed; vertical structure; Bipolar transistors; Current density; Equivalent circuits; Geometry; Helium; Industry Applications Society; Insulated gate bipolar transistors; Low voltage; MOSFETs; Power semiconductor switches;

fLanguage

English

Journal_Title

Industry Applications, IEEE Transactions on

Publisher

ieee

ISSN

0093-9994

Type

jour

DOI

10.1109/28.60048

Filename

60048