Multiple Sb ion implantation for deep-submicron pMOS channel doping

Author

Suzuki, Kunihiro ; Satoh, Akira ; Sugii, Toshihiro

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

44

Issue

3

fYear

1997

fDate

3/1/1997 12:00:00 AM

Firstpage

448

Lastpage

454

Abstract

We propose a channel doping technology for pMOSFET´s in which Sb is multiply ion implanted to produce a uniform doping profile in the region deeper than the minimum projected range of the multiple ion implantation. We derive a threshold voltage model and show how to realize this uniform doping profile, which is verified with experimental data. We study the short-channel effect of this device using a two-dimensional (2-D) device simulator, and show that this transistor can readily operate with a gate length of down to 0.1 μm

Keywords

MOSFET; antimony; doping profiles; ion implantation; semiconductor device models; silicon-on-insulator; 0.1 mum; SOI substrate; Si:Sb-SiO₂; channel doping technology; deep-submicron pMOS channel doping; gate length; minimum projected range; multiple Sb ion implantation; pMOSFET; short-channel effect; threshold voltage model; two-dimensional device simulator; uniform doping profile; Capacitance; Counting circuits; Degradation; Doping profiles; Ion implantation; MOSFET circuits; Semiconductor process modeling; Temperature dependence; Threshold voltage; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.556155

Filename

556155