• DocumentCode
    1311870
  • Title

    Negative Rs and Rd in GaAs FET and HEMT equivalent circuits

  • Author

    Ladbrooke, P.H. ; Hill, Andrew J.

  • Author_Institution
    GaAs Code Ltd., Cambridge, UK
  • Volume
    26
  • Issue
    10
  • fYear
    1990
  • fDate
    5/1/1990 12:00:00 AM
  • Firstpage
    680
  • Lastpage
    682
  • Abstract
    A physical basis for negative Rs and Rd values is outlined. The implications for FET measurements, equivalent circuits, FET scaling and large-signal FET model extraction are discussed.
  • Keywords
    III-V semiconductors; equivalent circuits; field effect transistors; gallium arsenide; high electron mobility transistors; negative resistance; semiconductor device models; FET measurements; FET scaling; GaAs; HEMT; drain resistance; equivalent circuits; large-signal FET model extraction; source resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900445
  • Filename
    82789
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1311870