DocumentCode
1312321
Title
Correlation Between the Degradation of Perpendicular Anisotropy and the Double Hysteresis Behavior in [Pd/Co]
/FeMn Exchange Biased Thin Films
Author
Kim, Sunwook ; Bae, Seongtae ; Lin, Lin ; Joo, Ho Wan ; Hwang, Do Guwn
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Volume
45
Issue
12
fYear
2009
Firstpage
5271
Lastpage
5276
Abstract
We clearly detected double hysteresis by increasing Co layer thickness and decreasing the number of bilayers in perpendicular exchange biased [Pd(0.6)/Co(t)] n/FeMn(11.6 nm) thin films. In-plane tensile stress calculations confirmed that the appearance of double hysteresis is closely related to the degradation of stress-induced perpendicular anisotropy in the [Pd/Co] multilayers. Furthermore, annealing at the magnetic field applied perpendicular to the film plane directly verified that the enhancement of thermally induced perpendicular anisotropy, K eff-induced, in the [Pd/Co] multilayers is the main physical reason for removal of the double hysteresis. All our experimental and theoretical results demonstrated that perpendicular anisotropy is the dominant factor in controlling the double hysteresis behavior of perpendicularly magnetized [Pd/Co]n/FeMn exchange biased thin films.
Keywords
annealing; cobalt; exchange interactions (electron); iron alloys; magnetic hysteresis; magnetic multilayers; magnetic thin films; magnetomechanical effects; manganese alloys; palladium; perpendicular magnetic anisotropy; Pd-Co-FeMn; annealing; bilayers; double hysteresis behavior; exchange bias; in-plane tensile stress calculations; multilayers; perpendicular magnetization; stress-induced perpendicular anisotropy; thermally induced perpendicular anisotropy; thin films; Anisotropic magnetoresistance; Annealing; Gas detectors; Magnetic fields; Magnetic films; Magnetic hysteresis; Magnetic multilayers; Tensile stress; Thermal degradation; Transistors; Double hysteresis; exchange bias; perpendicular anisotropy degradation; stress relaxation;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2009.2025034
Filename
5326431
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