• DocumentCode
    1312321
  • Title

    Correlation Between the Degradation of Perpendicular Anisotropy and the Double Hysteresis Behavior in [Pd/Co] _{\\rm n} /FeMn Exchange Biased Thin Films

  • Author

    Kim, Sunwook ; Bae, Seongtae ; Lin, Lin ; Joo, Ho Wan ; Hwang, Do Guwn

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • Volume
    45
  • Issue
    12
  • fYear
    2009
  • Firstpage
    5271
  • Lastpage
    5276
  • Abstract
    We clearly detected double hysteresis by increasing Co layer thickness and decreasing the number of bilayers in perpendicular exchange biased [Pd(0.6)/Co(t)] n/FeMn(11.6 nm) thin films. In-plane tensile stress calculations confirmed that the appearance of double hysteresis is closely related to the degradation of stress-induced perpendicular anisotropy in the [Pd/Co] multilayers. Furthermore, annealing at the magnetic field applied perpendicular to the film plane directly verified that the enhancement of thermally induced perpendicular anisotropy, K eff-induced, in the [Pd/Co] multilayers is the main physical reason for removal of the double hysteresis. All our experimental and theoretical results demonstrated that perpendicular anisotropy is the dominant factor in controlling the double hysteresis behavior of perpendicularly magnetized [Pd/Co]n/FeMn exchange biased thin films.
  • Keywords
    annealing; cobalt; exchange interactions (electron); iron alloys; magnetic hysteresis; magnetic multilayers; magnetic thin films; magnetomechanical effects; manganese alloys; palladium; perpendicular magnetic anisotropy; Pd-Co-FeMn; annealing; bilayers; double hysteresis behavior; exchange bias; in-plane tensile stress calculations; multilayers; perpendicular magnetization; stress-induced perpendicular anisotropy; thermally induced perpendicular anisotropy; thin films; Anisotropic magnetoresistance; Annealing; Gas detectors; Magnetic fields; Magnetic films; Magnetic hysteresis; Magnetic multilayers; Tensile stress; Thermal degradation; Transistors; Double hysteresis; exchange bias; perpendicular anisotropy degradation; stress relaxation;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2009.2025034
  • Filename
    5326431