Analysis of Radio Frequency Performance on GaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor which Applicable for Green Energy System Applications

Author

Young Jun Yoon ; Jae Hwa Seo ; Hwan Gi Lee ; Gwan Min Yoo ; Young Jae Kim ; Sung Yoon Kim ; Sung Yun Woo ; Hee Bum Roh ; Hye Rim Eun ; Hye Su Kang ; Seongjae Cho ; Eou-Sik Cho ; Jin-Hyuk Bae ; Jung-Hee Lee ; In Man Kang

Author_Institution

Sch. of Electron. Eng., Kyungpook Nat. Univ., Daegu, South Korea

fYear

2014

fDate

10-11 Jan. 2014

Firstpage

95

Lastpage

98

Abstract

We have proposed a tunneling field-effect transistor (TFET) having a GaAs/InGaAs heterojunction structure for radio frequency (RF) application. The GaAs/InGaAs heterojunction TFETs are investigated in terms of DC and RF characteristics by using the device simulation technology. The proposed TFET showed excellent subthreshold swing (S) and on/off current ratio as low standby power (LSTP) devices. Moreover, the superb RF performances of proposed TFET were obtained by designing drain doping (D_Drain). It was confirmed that the GaAs/InGaAs heterojunction TFET is suitable for RF applications.

Keywords

III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; low-power electronics; semiconductor heterojunctions; tunnel transistors; wide band gap semiconductors; DC characteristics; GaAs-InGaAs; LSTP devices; RF characteristics; device simulation technology; drain doping; green energy system; heterojunction TFET; heterojunction structure; heterojunction tunneling field-effect transistor; low standby power devices; radio frequency performance; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Logic gates; Radio frequency; Transistors; Tunneling; Cut-off Frequency; Device simulator; Heterojunction Structure; Radio Frequency; Subthreshold swing; Tunneling Field-Effect Transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Measuring Technology and Mechatronics Automation (ICMTMA), 2014 Sixth International Conference on

Conference_Location

Zhangjiajie

Print_ISBN

978-1-4799-3434-8

Type

conf

DOI

10.1109/ICMTMA.2014.28

Filename

6802644