• DocumentCode
    1314589
  • Title

    Charge Trapping and Detrapping Behavior of Fluorinated \\hbox {HfO}_{2}/\\hbox {SiON} Gate Stacked nMOSFET

  • Author

    Chen, Yung-Yu ; Hsieh, Chih-Ren

  • Author_Institution
    Lunghwa Univ. of Sci. & Technol., Taoyuan, Taiwan
  • Volume
    31
  • Issue
    11
  • fYear
    2010
  • Firstpage
    1178
  • Lastpage
    1180
  • Abstract
    The charge trapping and detrapping characteristics of the fluorinated hafnium oxide/oxynitride (HfO2/SiON) gate stack are investigated. Although incorporation of fluorine in the bulk stack had been proven to eliminate both bulk and interface trap densities due to Hf-F and Si-F bond formation, respectively, the effective trapping barrier of the device with fluorine incorporation (1.29 eV) is deeper than without fluorine incorporation (1.13 eV), indicating that the detrapping ability of the fluorinated devices may limit future fluorine process applications.
  • Keywords
    MOSFET; fluorine; hafnium compounds; silicon compounds; HfO2-SiON; charge detrapping behavior; charge trapping behavior; fluorinated gate stacked nMOSFET; fluorine incorporation; fluorine process applications; hafnium oxide-oxynitride; interface trap densities; Charge carrier processes; Dielectrics; High K dielectric materials; Logic gates; MOSFET circuits; Passivation; Silicon; $hbox{HfO}_{2}$; Charge detrapping; fluorine;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2064753
  • Filename
    5565386
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1314589