DocumentCode
1315347
Title
Packaged 2*2 array of InGaAs/InP multiple quantum well modulators grown by double-sided epitaxy
Author
Rejman-Greene, M.A.Z. ; Scott, E.G.
Author_Institution
British Telecom Res. Labs., Ipswich, UK
Volume
26
Issue
13
fYear
1990
fDate
6/21/1990 12:00:00 AM
Firstpage
946
Lastpage
948
Abstract
Epitaxial growth of InGaAs/InP MQW structures on both sides of an InP substrate is used to enhance the performance of planar optical modulators to 3.8 dB for -10 V change in bias. 2*2 arrays of such devices, operating at 1.51 mu m, are realised by means of a novel packaging scheme.
Keywords
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical modulation; packaging; semiconductor growth; 1.51 micron; 2*2 arrays; InGaAs-InP; InP substrate; MQW structures; double-sided epitaxy; epitaxial semiconductor growth; gas-source MBE; multiple quantum well; packaging scheme; planar optical modulators; quantum confined Stark effect; two-dimensional arrays;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900617
Filename
82865
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