21-kV SiC BJTs With Space-Modulated Junction Termination Extension

Author

Miyake, Hiroki ; Okuda, Takafumi ; Niwa, Hiroki ; Kimoto, Tsunenobu ; Suda, Jun

Author_Institution

Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan

Volume

33

Issue

11

fYear

2012

Firstpage

1598

Lastpage

1600

Abstract

We report here 20-kV-class small-area (0.035 mm²) 4H-SiC bipolar junction transistors. We implemented edge termination techniques featuring two-zone junction termination extension and space-modulated rings. On-state characteristics showed a current gain of 63 and a specific on-resistance of 321 mΩ·cm², which is slightly below the SiC unipolar limit. We achieved the open-base blocking voltage of 21 kV at a leakage current of 0.1 mA/cm², which is the highest blocking voltage among any semiconductor switching devices.

Keywords

bipolar transistors; leakage currents; silicon compounds; wide band gap semiconductors; BJT; SiC; bipolar junction transistors; edge termination techniques; leakage current; on-state characteristics; open-base blocking voltage; semiconductor switching devices; space-modulated junction termination extension; space-modulated rings; two-zone junction termination extension; voltage 20 kV; voltage 21 kV; Bipolar transistors; Junctions; Leakage current; Silicon carbide; Transistors; Voltage measurement; Bipolar junction transistor (BJT); edge termination; silicon carbide (SiC); ultrahigh voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2215004

Filename

6329472