• DocumentCode
    1315576
  • Title

    Evaluation of single ohmic metallisations for contacting both p- and n-type GaInAs

  • Author

    Shantharama, L.G. ; Schumacher, H. ; Leblanc, H.P. ; Esagui, R. ; Bhat, R. ; Koza, M.

  • Author_Institution
    Bellcore, Red Bank, NJ, USA
  • Volume
    26
  • Issue
    15
  • fYear
    1990
  • fDate
    7/19/1990 12:00:00 AM
  • Firstpage
    1127
  • Lastpage
    1129
  • Abstract
    The contact resistivity of various non-alloyed ohmic contact metallisations on both n- and p-type Ga0.47In0.53As has been investigated. Pd/AuGe metallisation was found to be most suitable when layers of both doping types were to be contacted in a single step, having lower contact resistivities on p+-GaInAs than Ti/Pt/Au and AuBe/Pt/Au. On n+-GaInAs, the contact resistivity was found to be almost independent of the metallisation used.
  • Keywords
    III-V semiconductors; contact resistance; gallium arsenide; gold; gold alloys; indium compounds; metallisation; ohmic contacts; palladium; platinum; titanium; GaInAs-AuBe-Pt-Au; GaInAs-Pd-AuGe; GaInAs-Ti-Pt-Au; contact resistivity; doping types; single ohmic metallisations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900729
  • Filename
    82899
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1315576