DocumentCode
1316263
Title
Effect of statistical variation on threshold voltage in narrow-channel MOSFETs
Author
Li, E.H. ; Liu, C.K. ; Ng, H.C.
Author_Institution
Dept. of Electron. & Electr. Eng., Surry Univ., Guildford, UK
Volume
26
Issue
17
fYear
1990
Firstpage
1390
Lastpage
1391
Abstract
The first statistical variation analysis in narrow-channel MOSFETs with field oxide isolation structure is presented. The variation of the threshold voltage induced by Gaussian distributed device process parameters such as channel width, doping concentration, interface fixed oxide charges, and gate oxide thickness is investigated by simulation.
Keywords
MOS integrated circuits; VLSI; insulated gate field effect transistors; integrated circuit technology; semiconductor technology; statistical analysis; Gaussian distributed device process parameters; VLSI; channel width; doping concentration; field oxide isolation structure; gate oxide thickness; interface fixed oxide charges; narrow-channel MOSFETs; scaling; simulation; statistical variation analysis; threshold voltage statistical variation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900893
Filename
83002
Link To Document