• DocumentCode
    1316946
  • Title

    High electron mobility InGaAs-GaAs field effect transistor with thermally oxidised AlAs gate insulator

  • Author

    DeMelo, C.B. ; Hall, D.C. ; Snider, G.L. ; Xu, D. ; Kramer, G. ; El-Zein, N.

  • Author_Institution
    Dept. of Electr. Eng., Notre Dame Univ., IN, USA
  • Volume
    36
  • Issue
    1
  • fYear
    2000
  • fDate
    1/6/2000 12:00:00 AM
  • Firstpage
    84
  • Lastpage
    86
  • Abstract
    A GaAs-based high electron mobility metal-oxide-semiconductor field effect transistor (MOSFET) is fabricated using wet thermal oxidation of AlAs. Enhanced transport properties and interface smoothness result from use of a pseudomorphic In0.2Ga0.8 As channel layer, yielding a high transconductance of 50 mS/mm (5 μm gate length)
  • Keywords
    III-V semiconductors; MOSFET; gallium arsenide; high electron mobility transistors; indium compounds; interface roughness; leakage currents; oxidation; 5 mum; 50 mS/mm; AlAs; In0.2Ga0.8As-GaAs; InGaAs-GaAs high electron mobility MOSFET; enhanced transport properties; gate leakage current; gate length; gate oxide formation; high transconductance; interface smoothness; lateral wet thermal oxidation; pseudomorphic In0.2Ga0.8As channel layer; thermally oxidised AlAs gate insulator;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000026
  • Filename
    830537
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1316946