• DocumentCode
    1317168
  • Title

    Heterojunction field effect transistor laser

  • Author

    Suzuki, Yuya ; Yajima, Hiroya ; Shimoyama, Koji ; Inoue, Yasuyuki ; Katoh, Masahiro ; Gotoh, H.

  • Author_Institution
    Opt. Inf. Sect., Electrotech. Lab., Ibaraki, Japan
  • Volume
    26
  • Issue
    19
  • fYear
    1990
  • Firstpage
    1632
  • Lastpage
    1633
  • Abstract
    A successful demonstration of a heterojunction field effect transistor laser is described. A typical threshold current of 45 mA in a laser mode and a transconductance of 62 mS in a FET mode are obtained for the same device.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; junction gate field effect transistors; semiconductor junction lasers; 45 mA; 62 mS; GaAs-AlGaAs; HJFET; OEIC; demonstration; heterojunction field effect transistor laser; laser mode; threshold current; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901046
  • Filename
    83078
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1317168