• DocumentCode
    1317174
  • Title

    Modelling of electron mobility in silicon MOS inversion and accumulation layers at liquid helium temperature

  • Author

    Hafez, I.M. ; Emrani, A. ; Ghibaudo, G. ; Balestra, F.

  • Author_Institution
    Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
  • Volume
    26
  • Issue
    19
  • fYear
    1990
  • Firstpage
    1633
  • Lastpage
    1635
  • Abstract
    A study of the effective mobility in silicon MOS inversion and accumulation layers at liquid helium temperature is reported. It is demonstrated, using MOS devices of various technologies, that the effective mobility, mu eff, at liquid helium temperature can be represented by a bell-shaped function of the inversion (or accumulation) charge Qn.
  • Keywords
    carrier mobility; cryogenics; elemental semiconductors; insulated gate field effect transistors; semiconductor device models; silicon; 4.2 K; MOS accumulation layer; MOS devices; MOS inversion layer; Si; electron mobility; liquid He temperature; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901047
  • Filename
    83079
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1317174