Polarity dependence of charge to breakdown and interface state generation of oxynitride gate dielectrics prepared by rapid thermal processing

Author

Joshi, A.B. ; Lo, G.Q. ; Kwong, D.L. ; Xie, J.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

26

Issue

21

fYear

1990

Firstpage

1741

Lastpage

1742

Abstract

MOS devices were fabricated with dry thermal oxides, nitrided oxides and annealed nitrided oxides. The anneals were performed in O₂ or N₂ ambients using rapid thermal processing. Charge to breakdown, Q_bd, and interface state generation, Delta D_it, for these devices were studied using Fowler-Nordheim electron injection. The gate bias polarity dependence of Q_bd and Delta D_it was investigated. A model is proposed to explain the observed dependence of these quantities on the polarity of injection and process parameters.

Keywords

dielectric thin films; electric breakdown of solids; incoherent light annealing; interface electron states; metal-insulator-semiconductor devices; silicon compounds; Fowler-Nordheim electron injection; MOS devices; N₂; O₂; Si-SiO₂; Si-SiO_xN_y; VLSI; annealed nitrided oxides; charge to breakdown; dry thermal oxides; gate bias polarity dependence; injection polarity; interface state generation; model; nitrided oxides; oxynitride gate dielectrics; process parameters; rapid thermal processing;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19901118

Filename

83085