• DocumentCode
    1317198
  • Title

    High peak-to-valley current ratio AlGaAs/AlAs/GaAs double barrier resonant tunnelling diodes

  • Author

    Reddy, Viswanath K. ; Tsao, A.J. ; Neikirk, D.P.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • Volume
    26
  • Issue
    21
  • fYear
    1990
  • Firstpage
    1742
  • Lastpage
    1744
  • Abstract
    A double barrier resonant tunnelling diode with the highest room temperature peak-to-valley current ratio using AlxGa1-xAs/GaAs quantum wells is reported. Room temperature peak-to-valley ratios of 6.3 were obtained using an Al0.2Ga0.8As ´chair´ barrier. Peak current density for these diodes was typically 30 kA/cm2.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor quantum wells; tunnel diodes; Al 0.2Ga 0.8As ´chair´ barrier; Al xGa 1-xAs/GaAs quantum wells; AlGaAs-AlAs-GaAs double barrier resonant tunnelling diodes; peak current density; room temperature peak-to-valley current ratio;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901119
  • Filename
    83086
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1317198