• DocumentCode
    1317225
  • Title

    Low threshold current GaInAs/AlInAs ridge MQW lasers with InP cladding layers

  • Author

    Kawamura, Y. ; Nonaka, K. ; Mikami, O.

  • Author_Institution
    NTT Optoelectron Labs., Kanagawa, Japan
  • Volume
    24
  • Issue
    10
  • fYear
    1988
  • fDate
    5/12/1988 12:00:00 AM
  • Firstpage
    637
  • Lastpage
    638
  • Abstract
    GaInAs/AlInAs ridge MQW lasers with InP cladding layers were fabricated by molecular beam epitaxy. The threshold current is as low as 60 mA and the lasing wavelength is 1.52 μm under pulsed conditions. The use of InP cladding layers made it possible to realise narrow-stripe-width ridge MQW lasers with low threshold currents. The characteristic temperature T0 is 88 K, which was greater than those reported for GaInAsP double heterostructure lasers in the 1.5 μm wavelength region
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; 1.52 micron; 60 mA; 88 K; GaInAs-AlInAs; InP cladding layers; characteristic temperature; lasing wavelength; molecular beam epitaxy; pulsed conditions; ridge MQW lasers; semiconductor laser; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    8309
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1317225