Preparation and Characterizations of the High UV Sensitivity Porous Diamond-Like Carbon Thin Film MSM Photodiodes

Author

Juang, Feng-Renn ; Fang, Yean-Kuen ; Ho, Hung-Cheng

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

12

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

978

Lastpage

983

Abstract

For the first time, we use a porous diamond-like carbon (DLC) film formed on a porous Si substrate to promote its ultraviolet (UV) quantum efficiency. With the porous DLC films, we developed metal-semiconductor-metal (MSM) photodiodes for UV detecting applications. The morphology and structure of the porous DLC film were analyzed with SEM photos for both top and cross section views. Besides, we examined the responses of the diodes to UV light by measurement of the photo/dark current ratio with and without the irradiation of a 366 nm UV light. Experiments show the current ratio and quantum efficiency are respectively promoted ~570% and ~76% under -15 V bias by the porous structure.

Keywords

dark conductivity; diamond-like carbon; metal-semiconductor-metal structures; photoconductivity; photodiodes; porous materials; scanning electron microscopy; thin film devices; ultraviolet radiation effects; C; SEM photos; Si; UV detecting applications; UV light irradiation; dark current; high UV sensitivity porous diamond-like carbon thin film MSM photodiodes; metal-semiconductor-metal photodiodes; photocurrent; porous DLC films; porous Si substrate; porous structure; ultraviolet quantum efficiency; wavelength 366 nm; Diamond-like carbon; Etching; Films; Ions; Plasma temperature; Silicon; Substrates; DLC; MSM; UV light; porous structure; quantum efficiency;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2011.2167320

Filename

6015520