Comments on "A numerical analysis of the storage times of dynamic random-access memory cells incorporating ultrathin dielectrics"

Author

Yu, Yun Seop ; Hwang, Sung Woo ; Song, Du-Heon ; Lee, Kyeong Ho

Author_Institution

Dept. of Electron. Eng., Korea Univ., Seoul, South Korea

Volume

47

Issue

4

fYear

2000

fDate

4/1/2000 12:00:00 AM

Firstpage

900

Lastpage

901

Abstract

For original paper see ibid., vol. 45, p. 218-23 (1998). This correspondence discusses two practical aspects which have to be included in the storage time analysis of the above referenced paper. First of all, the value of the diffusion current is overestimated by three orders of magnitude in calculating the log time dependence. Secondly, in the total junction leakage current, the generation current near the edges of the n/sup +/-Si/SiO/sub 2/ interface is a more important factor than the bulk generation current. Inclusion of those two practical aspects could lead to a different prediction of storage times in future DRAM cells with thin dielectrics.

Keywords

DRAM chips; cellular arrays; dielectric thin films; diffusion; integrated circuit reliability; leakage currents; Si-SiO/sub 2/; bulk generation current; diffusion current; dynamic random-access memory cells; generation current; junction leakage current; log time dependence; storage times; ultrathin dielectrics; DRAM chips;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.831014

Filename

831014