DocumentCode
1317989
Title
Integration of detectors with GaInAsP/InP carrier depletion optical switches
Author
Cavailles, J.A. ; Renaud, M. ; Jarry, P. ; Erman, M. ; Vinchant, J.F. ; Goutelle, A.
Author_Institution
Labs. d´´Electron. Philips, Limeil-Brevannes, France
Volume
26
Issue
21
fYear
1990
Firstpage
1783
Lastpage
1784
Abstract
An optical switch made of carrier depletion directional couplers based on GaInAsP/InP double-heterostructure waveguides with integrated detectors was realised. The device was fabricated using a two step Cl-VPE epitaxy and shows good performances both in terms of switching (phase modulation efficiency approximately 12 degrees /V/mm) and detecting properties (detector leakage current approximately 1 nA at -5 V).
Keywords
gallium arsenide; gallium compounds; indium compounds; integrated optics; optical couplers; optical information processing; optical switches; optical waveguides; photodetectors; semiconductor growth; vapour phase epitaxial growth; GaInAsP-InP double heterostructure waveguide; carrier depletion directional couplers; carrier depletion optical switches; chloride vapour phase epitaxy; detector leakage current; monolithically integrated detectors; optical signal processing; optical switch; phase modulation efficiency; two step Cl-VPE epitaxy;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901144
Filename
83111
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