Proposed two-level Acceptor-Donor (AD) center and the nature of switching traps in irradiated MOS structures

Author

Pershenkov, V.S. ; Cherepko, S.V. ; Sogoyan, A.V. ; Belyakov, V.V. ; Ulimov, V.N. ; Abramov, V.V. ; Shalnov, A.V. ; Rusanovsky, V.I.

Author_Institution

Moscow Eng. Phys. Inst., Russia

Volume

43

Issue

6

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

2579

Lastpage

2586

Abstract

A phenomenological model of switching traps in irradiated metal-oxide-semiconductor (MOS) structures is presented. After electron capture, the E´_γ center is supposed to be transformed into a new defect that is responsible for switching behavior. This new defect is assumed to have two energy levels (acceptor- and donor-like) and could easily communicate with substrate free carriers. The energy level position of the E´_γ center, latent build-up of interface traps and negative oxide-trapped charge are also discussed

Keywords

MIS structures; MOSFET; X-ray effects; defect states; electron traps; hole traps; interface states; E´_γ center; MOS structures; MOSFET; Si-SiO₂; X-ray irradiation; defect; electron capture; energy levels; interface traps; negative oxide-trapped charge; phenomenological model; switching traps; two-level acceptor-donor center; Annealing; Communication switching; Electron traps; Energy states; FETs; Instruments; MOSFET circuits; Paramagnetic resonance; Physics; Radioactive decay;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.556839

Filename

556839