DocumentCode
1318849
Title
CMOS/SOS RAM transient radiation upset and “inversion” effect investigation
Author
Nikiforov, A.Y. ; Poljakov, I.V.
Author_Institution
Specialized Electron. Syst., Moscow, Russia
Volume
43
Issue
6
fYear
1996
fDate
12/1/1996 12:00:00 AM
Firstpage
2659
Lastpage
2664
Abstract
The Complementary Metal-Oxide-Semiconductor/Silicon-on-Sapphire Random Access Memory (CMOS/SOS RAM) transient upset and “inversion” effect were investigated with pulsed laser, pulsed voltage generator and low-intensity light simulators. It was found that the “inversion” of information occurs due to memory cell photocurrents simultaneously with the power supply voltage drop transfer to memory cells outputs
Keywords
CMOS memory circuits; laser beam effects; random-access storage; CMOS/SOS RAM; inversion effect; light simulator; memory cell photocurrent; power supply voltage drop; pulsed laser; pulsed voltage generator; transient radiation; upset effect; Artificial intelligence; CMOS logic circuits; Optical pulse generation; Power supplies; Pulsed power supplies; Random access memory; Read-write memory; Strips; Testing; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.556850
Filename
556850
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